unisonic technologies co., ltd ut3418 power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2009 unisonic technologies co., ltd qw-r502-226.d n-channel enhancement mode field effect transistor ? description the ut3418 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suitable for use as a load switch or in pwm applications. ? features * r ds(on) < 60m ? @ v gs = 10 v * r ds(on) < 70m ? @ v gs = 4.5 v * r ds(on) < 155m ? @ v gs = 2.5 v * low capacitance * low gate charge * fast switching capability * avalanche energy specified ? symbol 2.gate 1.source 3.drain ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing UT3418L-AE3-R ut3418g-ae3-r sot-23 s g d tape reel ? marking 34u l: lead free g: halogen free
ut3418 power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-226.d ? absolute maximum ratings (t a = 25 , unless otherwise specified) parameter symbol ratings units drain-source voltage v dss 30 v gate-source voltage v gss 12 v continuous drain current i d 3.8 a pulsed drain current (note 2) i dm 15 a power dissipation p d 1.4 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings onl y and functional device oper ation is not implied. 2. pulse width limited by t j(max) ? thermal data parameter symbol min typ max unit junction to ambient ja 100 125 c/w ? electrical characteristics (t a =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250 a, v gs =0v 30 v drain-source leakage current i dss v ds =24v, v gs =0v 0.001 1 a gate-source leakage current i gss v gs =12v, v ds =0v 100 na on characteristics gate-threshold voltage v gs(th) v ds =v gs , i d =250a 1 1.4 1.8 v v gs =10v, i d =3.8a 43 60 m ? v gs =4.5v, i d =3.5a 52 70 m ? drain-source on-state resistance r ds(on) v gs =2.5v, i d =1a 101 155 m ? on-state drain current i d(on) v ds =5v, v gs =4.5v 15 a dynamic parameters input capacitance c iss 226 270 pf output capacitance c oss 39 pf reverse transfer capacitance c rss v ds =15v, v gs =0v, f=1.0mhz 29 pf switching parameters turn-on delay time t d(on) 2.6 4 ns turn-on rise time t r 3.2 5 ns turn-off delay time t d(off) 14.5 22 ns turn-off fall-time t f v ds =15v,r l =3.9 ? , v gs =10v, r g =6 ? 2.1 3 ns total gate charge q g 3 3.6 nc gate source charge q gs 1.4 nc gate drain charge q gd v ds =15v, v gs =4.5v, i d =3.8a 0.55 nc source- drain diode ratings and characteristics diode forward voltage v sd i s =1a, v gs =0v 0.81 1 v maximum body-diode continuous current i s 2.5 a body diode reverse recovery time t rr 10.2 13 ns body diode reverse recovery charge q rr i f =3.8a, di/dt=100a/ s 3.8 5 nc
ut3418 power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-226.d ? typical characteristics drain current vs. drain-source breakdown voltage 0 drain-source breakdown voltage, bv dss (v) 0 0.2 0 0 50 drain current vs. gate threshold voltage gate threshold voltage, v th (v) 100 150 200 250 300 10 100 150 200 250 300 1.2 50 20 30 40 50 0.4 0.6 0.8 1.0 0 drain current vs. source to drain voltage source to drain voltage, v sd (v) 0 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 1.2 v gs =4.5v v gs =10v 0 drain-source on-state resistance characteristics drain to source voltage, v ds (mv) 0 50 100 150 200 1 2 3 4 5 v gs =2.5v utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
|
